| 1996 |
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Company established |
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| 1997 |
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0.35um qualification |
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| 1998 |
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0.25um 64Mb SDRAM mass production |
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| 1999 |
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0.20um 64Mb SDRAM mass production |
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ProMOS listed on GreTai Securities Market |
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| 2000 |
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0.17um 128Mb SDRAM mass production |
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| 2001 |
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12 inch wafer out with yielding dice |
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0.14um 256Mb mass production |
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| 2002 |
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12 inch wafer fab at Hsinchu Science Park mass production |
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| 2003 |
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256Mb passed qualification by INTEL |
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512Mb passed qualification by INTEL |
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Consolidate MVG's core DRAM proprietary to be a comprehensive memory solution provider with R&D, brand name, marketing & sales capabilities |
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Hynix Semiconductor and ProMOS Technologies signed "Technology Licensing Agreement " |
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Formed Advanced Technology Research and Development Center |
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| 2004 |
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ProMOS 12 inch wafer fab at Central Taiwan Science Park commenced ground breaking |
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Self-developed 0.12um 256Mb DDR DRAM passed OEM customers' product qualification |
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| 2005 |
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ProMOS inaugurated second 300mm wafer fab (Fab3), mass production of 90nm stack technology node |
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Hynix Semiconductor and ProMOS Technologies signed contract for long-term strategic alliance |
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| 2006 |
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ProMOS third 300mm wafer fab (Fab4) Groundbreaking Ceremony |
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| 2007 |
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ProMOS third 300mm wafer fab (Fab4) commences mass production of 70nm stack technology node |
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Product Development Center founded |
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| 2008 |
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ProMOS and Hynix Semiconductor sign strategic alliance agreement to strengthen their long-term strategic alliance |
