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2011
  ProMOS and SilTerra to Offer Advanced High-Voltage Technology for Smartphone Market
   
2010
  ProMOS commenced mass production of 63nm 1Gb DDR3 SDRAM
   
2009
  ProMOS and Elpida Memory, Inc. started strategic partnership to cooperate on the manufacturing of mainstream 1Gb DDR3 products in 63 nanometer (nm) process technology
   
2008
  ProMOS successfully developed a 1G DDR2 product using 70nm process technology (shrink version)
   
2007
  ProMOS held a grand opening ceremony for its 300mm wafer fabrication plant in Central Taiwan Science Park (Phase II), commencing mass production of 70 nanometer (nm) stack technology node
   
2006
  ProMOS held a groundbreaking ceremony for its 300mm wafer fabrication plant (Phase II) in Central Taiwan Science Park
   
2005
  ProMOS held a grand opening ceremony for its 300mm wafer fabrication plant in Central Taiwan Science Park (Phase I), commencing mass production of 90 nanometer (nm) stack technology node
  Hynix Semiconductor and ProMOS Technologies signed contract for long-term strategic alliance
   
2004
  ProMOS developed 256Mb DDR DRAM in 0.12£gm technology passing OEM customers' product qualification
   
2003
  256Mb passed qualification by INTEL
  512Mb passed qualification by INTEL
  ProMOS consolidate MVG's core DRAM proprietary to be a comprehensive memory solution provider with R&D, brand name, marketing & sales capabilities
  ProMOS and Hynix Semiconductor signed "Technology Licensing Agreement "
   
2002
  ProMOS commenced mass production at a 300mm wafer fabrication plant in Hsin-chu Science Park, Taiwan
   
2001
  ProMOS ' 12 inch wafer out with yielding dice
  ProMOS commenced mass production of 256Mb using 0.14£gm technology
   
2000
  ProMOS commenced mass production of 128Mb SDRAM using 0.17£gm technology
   
1999
  ProMOS commenced mass production of 64Mb SDRAM using 0.20£gm technology
  ProMOS's common stock is traded on the Taiwan Over-The-Counter (OTC) under the 5387 symbol
   
1998
  ProMOS commenced mass production of 64Mb SDRAM using 0.25£gm technology
   
1997
  ProMOS' 0.35£gm technology passed qualification
  ProMOS commenced mass production at a 200mm wafer fabrication plant in Hsin-chu Science Park, Taiwan
   
1996
  ProMOS Technologies was founded