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> Home > About ProMOS > Company Profile > Milestones
 
1996
  Company established
   
1997
  0.35um qualification
   
1998
  0.25um 64Mb SDRAM mass production
   
1999
  0.20um 64Mb SDRAM mass production
  ProMOS listed on GreTai Securities Market
   
2000
  0.17um 128Mb SDRAM mass production
   
2001
  12 inch wafer out with yielding dice
  0.14um 256Mb mass production
   
2002
  12 inch wafer fab at Hsinchu Science Park mass production
   
2003
  256Mb passed qualification by INTEL
  512Mb passed qualification by INTEL
  Consolidate MVG's core DRAM proprietary to be a comprehensive memory solution provider with R&D, brand name, marketing & sales capabilities
  Hynix Semiconductor and ProMOS Technologies signed "Technology Licensing Agreement "
  Formed Advanced Technology Research and Development Center
   
2004
  ProMOS 12 inch wafer fab at Central Taiwan Science Park commenced ground breaking
  Self-developed 0.12um 256Mb DDR DRAM passed OEM customers' product qualification
   
2005
  ProMOS inaugurated second 300mm wafer fab (Fab3), mass production of 90nm stack technology node
  Hynix Semiconductor and ProMOS Technologies signed contract for long-term strategic alliance
   
2006
  ProMOS third 300mm wafer fab (Fab4) Groundbreaking Ceremony
   
2007
  ProMOS third 300mm wafer fab (Fab4) commences mass production of 70nm stack technology node
  Product Development Center founded
   
2008
  ProMOS and Hynix Semiconductor sign strategic alliance agreement to strengthen their long-term strategic alliance

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