| 2011 |
| |
 |
ProMOS and SilTerra to Offer Advanced High-Voltage Technology for Smartphone Market |
| |
|
| 2010 |
| |
|
ProMOS commenced mass production of 63nm 1Gb DDR3 SDRAM |
| |
|
| 2009 |
| |
|
ProMOS and Elpida Memory, Inc. started strategic partnership to cooperate on the manufacturing of mainstream 1Gb DDR3 products in 63 nanometer (nm) process technology |
| |
|
| 2008 |
| |
|
ProMOS successfully developed a 1G DDR2 product using 70nm process technology (shrink version) |
| |
|
| 2007 |
| |
|
ProMOS held a grand opening ceremony for its 300mm wafer fabrication plant in Central Taiwan Science Park (Phase II), commencing mass production of 70 nanometer (nm) stack technology node |
| |
|
| 2006 |
| |
|
ProMOS held a groundbreaking ceremony for its 300mm wafer fabrication plant (Phase II) in Central Taiwan Science Park |
| |
|
| 2005 |
| |
|
ProMOS held a grand opening ceremony for its 300mm wafer fabrication plant in Central Taiwan Science Park (Phase I), commencing mass production of 90 nanometer (nm) stack technology node |
| |
|
Hynix Semiconductor and ProMOS Technologies signed contract for long-term strategic alliance |
| |
|
| 2004 |
| |
|
ProMOS developed 256Mb DDR DRAM in 0.12£gm technology passing OEM customers' product qualification |
| |
|
| 2003 |
| |
|
256Mb passed qualification by INTEL |
| |
|
512Mb passed qualification by INTEL |
| |
|
ProMOS consolidate MVG's core DRAM proprietary to be a comprehensive memory solution provider with R&D, brand name, marketing & sales capabilities |
| |
|
ProMOS and Hynix Semiconductor signed "Technology Licensing Agreement " |
| |
|
| 2002 |
| |
|
ProMOS commenced mass production at a 300mm wafer fabrication plant in Hsin-chu Science Park, Taiwan |
| |
|
| 2001 |
| |
|
ProMOS ' 12 inch wafer out with yielding dice |
| |
|
ProMOS commenced mass production of 256Mb using 0.14£gm technology |
| |
|
| 2000 |
| |
|
ProMOS commenced mass production of 128Mb SDRAM using 0.17£gm technology |
| |
|
| 1999 |
| |
|
ProMOS commenced mass production of 64Mb SDRAM using 0.20£gm technology |
| |
|
ProMOS's common stock is traded on the Taiwan Over-The-Counter (OTC) under the 5387 symbol |
| |
|
| 1998 |
| |
|
ProMOS commenced mass production of 64Mb SDRAM using 0.25£gm technology |
| |
|
| 1997 |
| |
|
ProMOS' 0.35£gm technology passed qualification |
| |
|
ProMOS commenced mass production at a 200mm wafer fabrication plant in Hsin-chu Science Park, Taiwan |
| |
|
| 1996 |
| |
|
ProMOS Technologies was founded |
| |
|
